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1

Structure of the 0.767-eV oxygen-carbon luminescence defect in 450 °C thermally annealed Czochralski-grown silicon

Kürner, W., Sauer, R., Dörnen, A., Thonke, K.

Journal:

Physical Review B

Year:

1989

Language:

english

File:

PDF, 541 KB

english, 1989

2

in InP

Pressel, K., Bohnert, G., Dörnen, A., Kaufmann, B., Denzel, J., Thonke, K.

Journal:

Physical Review B

Year:

1993

Language:

english

File:

PDF, 455 KB

english, 1993

3

Charge-transfer transitions and pseudoacceptor states of iron in gallium phosphide

Pressel, K., Dörnen, A., Rückert, G., Thonke, K.

Journal:

Physical Review B

Year:

1993

Language:

english

File:

PDF, 478 KB

english, 1993

4

line) defect in oxygen-rich silicon

Wagner, J., Dörnen, A., Sauer, R.

Journal:

Physical Review B

Year:

1985

Language:

english

File:

PDF, 220 KB

english, 1985

5

in GaP studied by Fourier-transform emission and absorption spectroscopy

Rückert, G., Pressel, K., Dörnen, A., Thonke, K., Ulrici, W.

Journal:

Physical Review B

Year:

1992

Language:

english

File:

PDF, 482 KB

english, 1992

6

Optical transitions in GaAs:Fe studied by Fourier-transform infrared spectroscopy

Pressel, K., Rückert, G., Dörnen, A., Thonke, K.

Journal:

Physical Review B

Year:

1992

Language:

english

File:

PDF, 406 KB

english, 1992

7

Nitrogen-carbon radiative defect at 0.746 eV in silicon

Dörnen, A., Pensl, G., Sauer, R.

Journal:

Physical Review B

Year:

1986

Language:

english

File:

PDF, 343 KB

english, 1986

8

Set of five related photoluminescence defects in silicon formed through nitrogen-carbon interactions

Dörnen, A., Pensl, G., Sauer, R.

Journal:

Physical Review B

Year:

1987

Language:

english

File:

PDF, 226 KB

english, 1987

9

Nitrogen-Carbon-Oxygen Radiative Centers in Silicon: Uniaxial Stress Measurements

Dörnen, Achim, Sauer, R., Pensl, Gerhard

Journal:

Materials Science Forum

Year:

1989

File:

PDF, 407 KB

1989

10

Photoluminescence Uniaxial Stress Study of Fe2+ in InP

Thonke, Klaus, Pressel, Klaus, Hermann, H.U., Dörnen, Achim

Journal:

Materials Science Forum

Year:

1989

File:

PDF, 392 KB

1989

11

Time Resolved Study of Thermal Donor Related Luminescence Lines in Silicon

Dörnen, Achim, Hangleiter, A.

Journal:

Materials Science Forum

Year:

1986

File:

PDF, 375 KB

1986

12

Orientierungszusammenhang zwischen Austenit und Martensit bei Stählen mit niedrigem Kohlenstoffgehalt

Dörnen, Peter, Hofmann, Wilhelm

Journal:

Archiv für das Eisenhüttenwesen

Year:

1959

Language:

german

File:

PDF, 1.57 MB

german, 1959

13

Selected 3d-Transition Metals in Gallium Antimonide: Vanadium, Titanium and Iron

S. Lauer, Dr. A. N. Danilewsky, J. Meinhardt, R. Hofmann, Dr. A. Dörnen, Prof. Dr. K. W. Benz

Journal:

Crystal Research and Technology

Year:

1997

Language:

english

File:

PDF, 383 KB

english, 1997

14

Optical characterization of MOVPE grown GaInP layers

M. Moser, C. Geng, E. Lach, I. Queisser, F. Scholz, H. Schweizer, A. Dörnen

Journal:

Journal of Crystal Growth

Year:

1992

Language:

english

File:

PDF, 515 KB

english, 1992

15

Tm doping of III–V semiconductors by MOVPE

F. Scholz, J. Weber, D. Ottenwälder, K. Pressel, C. Hiller, A. Dörnen, K. Locke, F. Cordeddu, D. Wiedmann

Journal:

Journal of Crystal Growth

Year:

1992

Language:

english

File:

PDF, 467 KB

english, 1992

16

MOVPE growth of (Al)GaAs on GaAs and Si for photovoltaic applications

R.J Dieter, F Scholz, W Martin, A Hangleiter, A Dörnen, P Michler, W Kürner, B Lu, V Frese, J Hilgarth, K.-D Rasch

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 1.45 MB

english, 1992

17

Low pressure MOVPE of GaN and GaInNGaN heterostructures

F. Scholz, V. Härle, F. Steuber, H. Bolay, A. Dörnen, B. Kaufmann, V. Syganow, A. Hangleiter

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 288 KB

english, 1997

18

MOVPE of GaInN heterostructures and quantum wells

Scholz, Ferdinand, Off, Jürgen, Sohmer, Alexander, Syganow, Viktor, Dörnen, Achim, Ambacher, Oliver

Journal:

Journal of Crystal Growth

Year:

1998

Language:

english

File:

PDF, 137 KB

english, 1998

19

Low pressure metalorganic vapor phase epitaxial growth of GaN/GaInN heterostructures

F. Scholz, V. Härle, H. Bolay, F. Steuber, B. Kaufmann, G. Reyher, A. Dörnen, O. Gfrörer, S.-J. Im, A. Hangleiter

Journal:

Solid-State Electronics

Year:

1997

Language:

english

File:

PDF, 329 KB

english, 1997

20

Interplay between Jahn–Teller coupling and axial crystal fields: GaP:(Cr, S)

E Baars, A Dörnen, W Ulrici

Journal:

Physica B: Condensed Matter

Year:

1999

Language:

english

File:

PDF, 146 KB

english, 1999

21

Current transport mechanism and I–V characteristics of titanium and indium contacts to p-type GaN

B Šantić, A Dörnen

Journal:

Materials Science and Engineering: B

Year:

2002

Language:

english

File:

PDF, 148 KB

english, 2002

22

In incorporation efficiency and composition fluctuations in MOVPE grown GaInN/GaN hetero structures and quantum wells

F Scholz, A Sohmer, J Off, V Syganow, A Dörnen, J.-S Im, A Hangleiter, H Lakner

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 313 KB

english, 1997

23

Vibrational mode nitrogen and carbon isotope shifts on the N1(0.746 eV) photoluminescence spectrum in silicon

A. Dörnen, G. Pensl, R. Sauer

Journal:

Solid State Communications

Year:

1986

Language:

english

File:

PDF, 278 KB

english, 1986

24

Complexing of nitrogen with carbon and oxygen in silicon: Photoluminescence studies

A. Dörnen, R. Sauer, G. Pensl

Journal:

Journal of Electronic Materials

Year:

1988

Language:

english

File:

PDF, 495 KB

english, 1988

25

Growth and characterization of GaSb bulk crystals with low acceptor concentration

A. N. Danilewsky, S. Lauer, J. Meinhardt, K. W. Benz, B. Kaufmann, R. Hofmann, A. Dornen

Journal:

Journal of Electronic Materials

Year:

1996

Language:

english

File:

PDF, 863 KB

english, 1996

26

Luminescence and Absorption of Vanadium (V4+): In 6H-Silicon Carbide

Dörnen, Achim, Latushko, Ya.I., Suttrop, W., Pensl, Gerhard, Leibenzeder, S., Stein, René A.

Journal:

Materials Science Forum

Year:

1992

File:

PDF, 439 KB

1992

27

[IEEE Seventh International Conference on Indium Phosphide and Related Materials - Hokkaido, Japan (9-13 May 1995)] Seventh International Conference on Indium Phosphide and Related Materials - Determination of the in-plane mass in strained GaInAs/InP quantum wells

Harle, V., Rapp, S., Bolay, H., Reyher, G., Dornen, A., Hangleiter, A., Scholz, F., Limmer, W., Vasiliadou, E., Grambow, P., Weiss, D.

Year:

1995

Language:

english

File:

PDF, 402 KB

english, 1995

28

[IEEE Sixth International Conference Metalorganic Vapor Phase Epitaxy - Cambridge, MA (June 8-11, 1992)] Sixth International Conference Metalorganic Vapor Phase Epitaxy - Tm Doping of III-V Semiconductors by MOVPE

Weber, J., Scholz, F., Ottenwalder, D., Pressel, K., Hiller, C., Dornen, A., Cordeddu, F.

Year:

1992

Language:

english

File:

PDF, 126 KB

english, 1992

29

Frenkel pairs on the two sublattices of ZnTe

Uftring, S. J., Bozdog, C., Linde, M., Dörnen, A., Watkins, G. D.

Journal:

Physical Review B

Year:

2000

Language:

english

File:

PDF, 213 KB

english, 2000

30

quantum wells

Shao, Jun, Dörnen, Achim, Winterhoff, Rolf, Scholz, Ferdinand

Journal:

Physical Review B

Year:

2002

Language:

english

File:

PDF, 113 KB

english, 2002

31

Bound-to-bound transitions at neutral zinc in silicon: Effective-mass-like states and hole-hole interaction

Dörnen, A., Kienle, R., Thonke, K., Stolz, P., Pensl, G., Grünebaum, D., Stolwijk, N. A.

Journal:

Physical Review B

Year:

1989

Language:

english

File:

PDF, 197 KB

english, 1989

32

Optical studies on InP:Fe by Fourier-transform emission and absorption spectroscopy

Pressel, K., Thonke, K., Dörnen, A., Pensl, G.

Journal:

Physical Review B

Year:

1991

Language:

english

File:

PDF, 378 KB

english, 1991

33

quantum wells studied by photoluminescence and reflectivity spectroscopy

Shao, Jun, Winterhoff, Rolf, Dörnen, Achim, Baars, Enno, Chu, Junhao

Journal:

Physical Review B

Year:

2003

Language:

english

File:

PDF, 150 KB

english, 2003

34

Crystal-field model of vanadium in 6H silicon carbide

Kaufmann, B., Dörnen, A., Ham, F. S.

Journal:

Physical Review B

Year:

1997

Language:

english

File:

PDF, 301 KB

english, 1997

35

An Optical Zeeman Study on Fe3+ in GaAs and InP

Kaufmann, B., Haase, D., Dörnen, Achim, Hiller, C., Pressel, Klaus

Journal:

Materials Science Forum

Year:

1994

File:

PDF, 354 KB

1994

36

Electrical and Optical Characterization of Defects in GaN Generated by Ion Implantation

Haase, D., Burkard, M., Schmid, M., Dörnen, Achim, Schweizer, H., Bolay, H., Scholz, F.

Journal:

Materials Science Forum

Year:

1997

File:

PDF, 420 KB

1997

37

Charge Transfer at Ti Ions in ZnTe

Selber, H.R., Peka, P., Schulz, H.-J., Pohl, U.W., Kreissl, J., Kaufmann, B., Dörnen, Achim

Journal:

Materials Science Forum

Year:

1997

File:

PDF, 428 KB

1997

38

Zeeman Spectroscopy and Crystal-Field Model of Neutral Vandium in 6H-Silicon Carbide

Kaufmann, B., Dörnen, Achim, Ham, Frank S.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 362 KB

1995

39

FTIR High Resolution Optical Study of GaAs:Fe

Pressel, Klaus, Rückert, G., Thonke, Klaus, Dörnen, Achim

Journal:

Materials Science Forum

Year:

1992

File:

PDF, 457 KB

1992

40

Shallow Bound Pseudoacceptor States of Iron in Gallium Phosphide

Dörnen, Achim, Pressel, Klaus, Rückert, Gerd, Thonke, Klaus

Journal:

Materials Science Forum

Year:

1994

File:

PDF, 381 KB

1994

41

Optical Absorption and Zeeman Study of 6H-SiC:Cr

Dörnen, Achim, Kaufmann, B., Baur, J., Kunzer, M., Schneider, J., Baranov, P.

Journal:

Materials Science Forum

Year:

1997

File:

PDF, 413 KB

1997

42

Electronic Nature of Neutral Zinc in Silicon: FTIR-Absorption, Uniaxial Stress Measurements

Kaufmann, B., Dörnen, Achim, Lang, M., Pensl, Gerhard, Grünebaum, D., Stolwijk, Nicolaas

Journal:

Materials Science Forum

Year:

1992

File:

PDF, 467 KB

1992

43

Photoconductivity Study of CrB and CrI in Silicon

Schlette, A., Klenle, R., Dörnen, A., Kürner, W., Thonke, K.

Journal:

MRS Proceedings

Year:

1989

Language:

english

File:

PDF, 390 KB

english, 1989

44

Study of the Zeeman Effect of Er3+ in GaAs:Er,O

Haase, Dieter, Dörnen, Achim, Takahei, Kenichiro, Taguchi, Akihito

Journal:

MRS Proceedings

Year:

1996

Language:

english

File:

PDF, 406 KB

english, 1996

45

Infrared Studies of the Double Acceptor Zinc in Silicon

Dörnen, A., Kienle, R., Thonke, K., Stolz, P., Pensl, G., Grünebaum, D., Stolwijk, N.A.

Journal:

MRS Proceedings

Year:

1989

Language:

english

File:

PDF, 371 KB

english, 1989

46

Optical Study of the Fe3+-Related Emission at 0.5 eV in InP:Fe

Pressel, Klaus, Bohnert, G., Dörnen, A., Thonke, K.

Journal:

MRS Proceedings

Year:

1992

Language:

english

File:

PDF, 373 KB

english, 1992

47

Detailed Photoluminescence Studies of Heat-Treated InP

Pressel, Klaus, Hiller, C., Bohnert, G., Prinz, F., Dörnen, A.

Journal:

MRS Proceedings

Year:

1992

Language:

english

File:

PDF, 324 KB

english, 1992

48

Luminescence of TM3+ in Gallium Arsenide Grown by Metal-Organic Vapor Phase Epitaxy

DÖrnen, Achim, Pressel, Klaus, Hiller, Christoph, Haase, Dieter, Weber, JÜrgen, Scholz, Ferdinand

Journal:

MRS Proceedings

Year:

1993

Language:

english

File:

PDF, 380 KB

english, 1993

49

Movpe of Rare Earth Doped III-V Semiconductors

Scholz, F., Weber, J., Pressel, K., Dörnen, A.

Journal:

MRS Proceedings

Year:

1993

Language:

english

File:

PDF, 618 KB

english, 1993

50

Defect Reduction by Thermal Cyclic Growth in GaAs Grown on Si by Movpe

KÜrner, W., Dieter, R., Zieger, K., Goroncy, F., DÖrnen, A., Scholz, F.

Journal:

MRS Proceedings

Year:

1993

Language:

english

File:

PDF, 1.01 MB

english, 1993